Physics of Semiconductors and Nanostructures

This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book.

Key Features

• Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice
• In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique
• Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect
• Presents the optical processes in nanostructures under a magnetic field
• Includes illustrative problems with hints for solutions in each chapter

Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.

Preface

Organization of the Book

Acknowledgments

Authors

1 Crystalline Structure of Different Semiconductors

2 Quantum Theory, Energy Bands of Solids, Effective Mass, and Holes

3 Physics of Semiconductors

4 Transport Phenomena in Semiconductors

5 Low-Dimensional Semiconductors

6 Semiconductor Heterojunctions, Modulation-Doped Quantum Wells, and Superlattices

7 Transport Phenomena in Quantum Nanostructures under an Electric Field

8 Effect of Magnetic Field on the Transport Phenomena in Quantum Nanostructures

9 Optical Properties of Quantum Nanostructures

Appendix A.1: Some Fundamental Physical Constants

Appendix A.2: Some Important Parameters of Germanium, Silicon, and Gallium Arsenide at T = 300 K

Index

Jyoti Prasad Banerjee (Bandyopadhyay) received Master’s degree in Physics and PhD degree in (Technology) from the Institute of Radio Physics and electronics, University of Calcutta, India. He is the author of about two hundred publications in reputed scientific journals. He started his teaching career as lecturer in Physics of an undergraduate college affiliated under the University of Calcutta in 1971. After completing PhD degree, he joined as a senior scientist in the Institute of Radio Physics and Electronics, University of Calcutta. Thereafter he joined the Department of Electronic Science, University of Calcutta as Associate Professor in the year, 1989 and subsequently joined the Department of Radio Physics and Electronics of the same University as a full Professor. Later in 2008, he became the Director of Centre of Millimeter wave Semiconductor Devices and Systems (CMSDS) in the University of Calcutta. After his retirement from the University service, he was awarded Emeritus Fellowship by the University Grants Commission, New Delhi, India to work in his parent department. His research interest in general covers microwave, microelectronic, optoelectronic and quantum effect Devices. He has published about 200 research articles in international journals of repute and also a number of text books on Solid State electronic Devices, Basic electrical and Electronics Engineering and Physics of Semiconductor Devices. He has supervised a large number of doctoral theses of students in the field of microwave semiconductor devices. He is the recipient of Indian National Science Academy (INSA) award and Griffith Memorial Prize in Science from the University of Calcutta. He is a Fellow of IETE, New Delhi. He is presently looking after the academic growth and development of Kingston Educational Institute, Barasat, West Bengal, India comprising Science, Technology, Management and Law colleges as Academic Chairman.

Suranjana Banerjee received B