Description
Physical Limitations of Semiconductor Devices, 2008
Language: EnglishKeywords
ESD; Leistungsfeldeffekttransistor; SOA; Sinkevitch; Transistor; Vashchenko; bipolar junction transistor; bipolar power transistor; catastrophic failures; development; electrostatic discharge; field-effect transistor; metal oxide semiconductur field-effect transistor; safe-operating area; semiconductors
Publication date: 04-2008
330 p. · 15.5x23.5 cm · Hardback
330 p. · 15.5x23.5 cm · Hardback
Description
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Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.
Failures of Semiconductor Device.- Theoretical Basis of Current Instability in Transistor Structures.- Thermal Instability Mechanism.- Isothermal Current Instability in Silicon BJT and MOSFETs.- Isothermal Instability in Compound Semiconductor Devices.- Degradation Instabilities.- Conductivity Modulation in ESD devices.- Physical Approach to Reliability.
Provides the description and translation of cross-disciplinary phenomena for reliability assurance including circuit design, ESD design and TCAD simulation Applies directly to the area of ESD protection design Explains complex physical descriptions so that they can be applied to the decision making process
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