FinFET/GAA Modeling for IC Simulation and Design (2nd Ed.) Using the BSIM-CMG Standard
Auteurs : Chauhan Yogesh Singh, Hu Chenming, Pahwa Girish, Dasgupta Avirup, Lu Darsen, Vanugopalan Sriramkumar, Khandelwal Sourabh, Duarte Juan Pablo, Payvadosi Navid, Niknejad Ali
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard ? BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.
With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.
2. Cryogenic Temperature Model
3. FinFET- from Device Concept to Standard Compact Model
4. Analog/RF behavior of FinFET
5. Core Model for FinFETs
6. Channel Current and Real Device Effects
7. Leakage Current Models
8. Charge, Capacitance and Nonquasi-Static Effect
9. Parasitic Resistances and Capacitances
10. Noise
11. Junction Diode Current and Capacitance
12. Benchmark tests for Compact Models
13. BSIM-CMG Model Parameter Extraction
14. Temperature Effects
Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design. He is the developer of several industry standard models, including the BSIM-BULK (BSIM6), BSIM-IMG, BSIM-CMG and ASM-HEMT models.
Chenming Hu is Distinguished Chair Professor Emeritus at UC Berkeley. He was the Chief Technology Officer of TSMC and founder of Celestry Design Technologies. He is best known for developing the revolutionary 3D transistor FinFET that powers semiconductor chips beyond 20nm. He also led the development of BSIM-- the industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. His honors include the Asian American Engineer of the Year Award, IEEE Andrew Grove Award and Solid Circuits Award as well as Nishizawa Medal, and UC Berkeley's highest honor for teaching-- the Berkeley Distinguished Teaching Award.
Girish Pahwa is an assistant researcher in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California Berkeley, Berkeley, United States, and the executive director of the Berkeley Device Modeling Center. His research interests include modeling, simulation, and device–circuit co-design of advanced and emerging transistor technologies, especially ferroelectric devices, cryogenic-CMOS, and oxide semiconductors.
Avirup Dasgupta is an assistant professor in the Dept. of Electronics and Communication Engineering at the Indian Institute of Technology Roorkee (IITR). Prof. Dasgupta completed his undergraduate, graduate and doctoral studies at the Indian Institute of Technology Kanpur (IITK). He worked as the manager of the Berkeley Device Modeling Center and as a postdoctoral scholar in the BSIM group at the Dept. of Electri
- Authored by the lead inventor and developer of FinFET and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard
- Presents the first book on the industry-standard FinFET model - BSIM-CMG
- Includes a new chapter that provides a comprehensive introduction to GAA, including motivations, device concepts, structure, fabrication steps, benefits, and the industry standard GAA model
- Covers the recent developments in the BSIM-CMG model
- Updates on RF modeling of FinFET using BSIM-CMG model, including parameter extraction
Date de parution : 05-2024
Ouvrage de 352 p.
19x23.3 cm