Description
Compact Models for Integrated Circuit Design
Conventional Transistors and Beyond
Author: Saha Samar K.
Language: English
Subjects for Compact Models for Integrated Circuit Design:
Keywords
MOSFET Device; VLSI Circuit Design; Drain Current Modeling; Very-Large-Scale-Integrated Circuit Design; Threshold Voltage Modeling; Nanoscale Devices; Inversion Charge; Circuit Simulation Compact Models; MOS Capacitor; BJT Models; Equivalent Circuit; Bipolar Junction Transistor Compact Models; Compact Models; TFETs; Strong Inversion; Tunnel FETs; Weak Inversion; Tunnel Field-Effect Transistors; Minority Carrier; Beyond-CMOS Transistor Models; Advanced CMOS Technology; Ultrathin Body FETs; MOSFET Model; Scaled MOSFETs; Drain Ends; Modeling Process Variability; Inversion Charge Density; RF Applications; Depletion Regions; Radio Frequency Applications; High Level Injection; Compact MOSFET Models; Short Channel Devices; MOSFET Compact Models; Compact Device Model; MOSFET Capacitance Models; Channel Doping Concentration; Small Geometry MOSFET Compact Models; Channel Doping; Large Geometry MOSFET Compact Models; VLSI Circuit; FinFET Models; Weak Inversion Region; FETs; Low Level Injection; Field-Effect Transistors; Inversion Layer; MOSFETs; Metal Oxide Semiconductor Field Effect Transistor; Metal-Oxide-Semiconductor Field-Effect Transistors; Statistical MOS Models; MOS Systems; Metal-Oxide-Semiconductor Systems; Semiconductor Physics; Basic Device Physics; Conventional Transistors; Circuit CAD; Circuit Computer-Aided Design; IC Design; Integrated Circuit Design; Compact Model Library
Publication date: 07-2017
· 15.6x23.4 cm · Paperback
Publication date: 08-2015
· 15.6x23.4 cm · Hardback
Description
/li>Contents
/li>Biography
/li>
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.
Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:
- Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
- Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
- Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
- Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
- Includes exercise problems at the end of each chapter and extensive references at the end of the book
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
Introduction to Compact Models. Review of Basic Device Physics. Metal-Oxide-Semiconductor System. Large Geometry MOSFET Compact Models. Compact Models for Small Geometry MOSFETs. MOSFET Capacitance Models. Compact MOSFET Models for RF Applications. Modeling Process Variability in Scaled MOSFETs. Compact Models for Ultrathin Body FETs. Beyond-CMOS Transistor Models: Tunnel FETs. Bipolar Junction Transistor Compact Models. Compact Model Library for Circuit Simulation.
Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016–2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.
