Nitride Semiconductor Light-Emitting Diodes (LEDs) (2nd Ed.)
Materials, Technologies, and Applications
Woodhead Publishing Series in Electronic and Optical Materials Series

Authors:

Language: English
Cover of the book Nitride Semiconductor Light-Emitting Diodes (LEDs)

Subjects for Nitride Semiconductor Light-Emitting Diodes (LEDs)

Keywords

AlGaN; AlN; Auger recombination; Automotive headlamps; Backlight unit; Beam-shaping; Beam-steering; Carrier leakage; Carrier transport; Chip packaging; Connected LED; Consortia; Customers and regulators; Deep UV-LED; Degradation mechanism; Dislocation; Droop; Efficiency droop; Electroluminescence; Energy transfer; Epitaxial growth; Epitaxial overgrowth; Epitaxy; ESD test; External quantum efficiency; Failure analysis; Far-Light extraction; Fields of application; Flip-chip LED (FCLED)Gallium nitride (GaN)Light-emitting diode (LED)Photonic crystal (PC)Thin-film LED (TFLED)Forward illumination; Freeform lens; GaN (gallium nitride)Light-emitting diodes (LEDs)Nonpolar and semipolar growth; GaN on silicon; GaN; Green gap; HCL; Heteroepitaxy; Infrared; InGaN; Intersubband; Large-area substrates; Laser diode (LD)Light-emitting diode (LED)Metal-organic chemical vapor deposition (MOCVD)Molecular beam epitaxy (MBE)Nanocolumn; LCD backlight; LED backlight; LED LCD backlight; LED; LEDs; Life test; Light emitting diodes; Light-emitting diode (LED)Patterned sapphire substrate (PSS)Photonic crystal (PC)Photonic quasi-crystal (PQC)Solar cell; Light-emitting diode (LED)Phosphor coating; MOCVD; Nanotechnology; Nitride; Nonpolar; Patterned sapphire substrates; Phosphors; Photoluminescence tuning; Photoluminescence; Platforms; p-n junction diode; Polarization; QCSE; Quantum well; Rare earth ions; Rare-earth; Sapphire substrates; Semipolar; Strained heteroepitaxial growth; Structural design; Surface-patterned LED; Thermal droop; Thermal resistance; Threading dislocation density; Ultra violet light emitting diodes; Vehicle emissions; Vehicular signals; Views of manufacturers; White LEDs; Wire bonding; Wireless

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Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.

The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.

It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

Part One Materials and fabrication 1. Molecular beam epitaxy (MBE) growth of nitride semiconductors 2. MOCVD growth of nitride semiconductors 3. GaN on sapphire substrates for visible light-emitting diodes 4. Gallium nitride (GaN) on silicon substrates for LEDs 5. Phosphors for white LEDs 6. Recent development of fabrication technologies of nitride LEDs for performance improvement 7. Nanostructured LED 8. Nonpolar and semipolar LEDs

Part Two Performance of nitride LEDs 9. Efficiency droop in GaInN/GaN LEDs 10. Photonic crystal nitride LEDs 11. Nitride LEDs based on quantum wells and quantum dots 12. Colour tuneable LEDs and pixelated micro-LED arrays 13. Reliability of nitride LEDs 14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 15. Chip packaging: encapsulation of nitride LEDs

Part Three Applications of nitride LEDs 16. White LEDs for lighting applications 17. Ultraviolet LEDs 18. Infrared emitters using III-nitride semiconductors 19. LEDs for liquid crystal display (LCD) backlighting 20. LEDs and automotive lighting applications 21. LEDs for large displays 22. LEDs for projectors

Researchers, engineers, and R&D engineers working in the fields of light emitting diode based solid state lighting technology or who are developing nitride devices; Manufacturers of computer monitors, cell phones, and tablets. Also could appeal to graduate students in materials science and engineering disciplines.

Prof. JianJang Huang received the B.S. degree in Electrical Engineering (EE) and the M.S. degree in Graduate Institute of Photonics and Optoelectronics (GIPO) from National Taiwan University (NTU), Taipei, Taiwan, in 1994 and 1996, respectively, and the Ph.D. degree in Electrical Engineering from the University of Illinois, Urbana-Champaign, in 2002. He had worked with WJ (Watkins Johnson) Communications in California, as a Staff Scientist from 2002 to 2004. He then came back to Taiwan in 2004 and is currently the professor at NTU EE and GIPO.
Prof. Huang has been involved in the development of optoelectronic and electronic devices. He has developed a spin-coating method for nanosphere lithography (NSL) to significantly improve the performance of light emitting diodes (LEDs), solar cells and nanorod devices. His NSL approach has been licensed to several LED companies in Taiwan. He has also fabricated and characterized IGZO TFTs and the corresponding circuits on glass and flexible substrates. In recent years, his group has spent great efforts in realizing cancer cell probes using ZnO nanorods, and high-sensitivity protein sensors based on IGZO TFTs.
Prof. Huang is a member of the Phi Tau Phi Scholastic Honor Society. He received “Wu Da-Yu” award in 2008, the most prestigious one for young researchers in Taiwan sponsored by National Science Council. And in the same year, he received the award for the most excellent young electrical engineer from the Chinese Institute of Electrical Engineering. He has served in several IPO committees in Taiwan Stock Exchange. He is currently the board director of GCS holdings in Torrance, CA, USA and the conference chair of SPIE, International Conference on Solid-State Lighting.
Professor H. C. Kuo received the B.S. degree in Physics from National Taiwan University, Taiwan the M.S. degree in Electrical and computer engineering from Rutgers University in 1995, and the Ph.D. from Center of Compound Semiconductor Microelectronic
  • Features new chapters on laser lighting, addressing the latest advances on this topic
  • Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development
  • Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots
  • Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
  • Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates