Heavily-Doped 2D-Quantized Structures and the Einstein Relation, 2015
Springer Tracts in Modern Physics Series, Vol. 260

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Language: English

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Heavily-Doped 2D-Quantized Structures and the Einstein Relation
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Heavily-Doped 2D-Quantized Structures and the Einstein Relation
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347 p. · 15.5x23.5 cm · Hardback
This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
From the Contents: The ER in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors.- The ER in NIPI Structures of HD Non-Parabolic Semiconductors.- The ER in Accumulation Layers of HD Non-Parabolic Semiconductors.- Suggestion for Experimental Determinations of 2D and 3D ERs and few Related Applications.- Conclusion and Scope for Future.

Born in India in 1953, Professor K. P. Ghatak obtained his B.E degree in Electronics and Telecommunication Branch from the then Bengal Engineering College Shibpur (Presently Bengal Engineering and Science University) of the University of Calcutta in 1974, M.Tech degree from the Institute of Radio Physics and Electronics of the University of Calcutta in 1976. He obtained his PhD (Tech) degree from the University of Calcutta in 1988 on the basis of 27 published research papers in International peer-reviewed Scientific Journals which is still a record in the said Institute. He joined as Lecturer in the Institute of Radio Physics and Electronics of the University of Calcutta in 1983, Reader in the Department of Electronics and Telecommunication Engineering of Jadavpur University in 1987 and Professor in the Department of Electronic Science of the University of Calcutta in 1994 and was at the top of the merit list in all the cases respectively. From March 2012, he has joined in the Department of Electronics and Communication Engineering of National Institute of Technology, Agartala, Tripura and presently acting as the Professor and Head of the said Department. Professor K. P. Ghatak is the First Recipient of the Degree of Doctor of Engineering of Jadavpur University in 1991 since the University inception in 1955 and in the same year he received the Indian National Science Academy visiting fellowship to IIT-Kharagpur. He is the principal co-author of more than 300 research papers on Semiconductor Nano-science in eminent peer-reviewed International Journals and more than 50 research papers in the Proceedings of SPIE and MRS and many of his papers are being cited many times. Professor Ghatak is the invited Speaker of SPIE, MRS, etc., the referee and Associate Editor of different eminent Journals. He has produced more than two dozens of PhD candidates in various aspects of materials and nano-sciences and many of them are working as Dean, Professor, Associate Professor an

Describes measurements of band gap in optoelectronic nanodevices under intense electric field and strong external photo excitation Presents 100 open research problems Covers a wide range of different technologically important electronic compounds in detail Includes supplementary material: sn.pub/extras