Semiconductor Devices

Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Preface vii

Acknowledgments ix

CHAPTER 0 1 Introduction

0.1 Semiconductor Devices 1

0.2 Semiconductor Technology 6

Summary 12

PART I SEMICONDUCTOR PHYSICS

CHAPTER 1 Energy Bands and Carrier Concentration in Thermal Equilibrium 15

1.1 Semiconductor Materials 15

1.2 Basic Crystal Structures 17

1.3 Valence Bonds 22

1.4 Energy Bands 23

1.5 Intrinsic Carrier Concentration 29

1.6 Donors and Acceptors 34

Summary 40

CHAPTER 2 Carrier Transport Phenomena 43

2.1 Carrier Drift 43

2.2 Carrier Diffusion 53

2.3 Generation and Recombination Processes 56

2.4 Continuity Equation 62

2.5 Thermionic Emission Process 68

2.6 Tunneling Process 69

2.7 Space–Charge Effect 71

2.8 High–Field Effects 73

Summary 77

PART II SEMICONDUCTOR DEVICES

CHAPTER 3 p–n Junction 82

3.1 Thermal Equilibrium Condition 83

3.2 Depletion Region 87

3.3 Depletion Capacitance 95

3.4 Current–Voltage Characteristics 99

3.5 Charge Storage and Transient Behavior 108

3.6 Junction Breakdown 111

3.7 Heterojunction 117

Summary 120

CHAPTER 4 Bipolar Transistors and Related Devices 123

4.1 Transistor Action 124

4.2 Static Characteristics of Bipolar Transistors 129

4.3 Frequency Response and Switching of Bipolar Transistors 137

4.4 Nonideal Effects 142

4.5 Heterojunction Bipolar Transistors 146

4.6 Thyristors and Related Power Devices 149

Summary 155

CHAPTER 5 MOS Capacitor and MOSFET 161

5.1 Ideal MOS Capacitor 161

5.2 SiO2–Si MOS Capacitor 170

5.3 Carrier Transport in MOS Capacitors 175

5.4 Charge–Coupled Devices (CCD) 178

5.5 MOSFET Fundamentals 181

Summary 193

CHAPTER 6 Advanced MOSFET and Related Devices 196

6.1 MOSFET Scaling 196

6.2 CMOS and BiCMOS 206

6.3 MOSFET on Insulator 211

6.4 MOS Memory Structures 215

6.5 Power MOSFET 224

Summary 225

CHAPTER 7 MESFET and Related Devices 230

7.1 Metal–Semiconductor Contacts 231

7.2 MESFET 242

7.3 MODFET 251

Summary 257

CHAPTER 8 Microwave Diodes; Quantum–Effect and Hot–Electron Devices 260

8.1 Microwave Frequency Bands 261

8.2 Tunnel Diode 262

8.3 IMPATT Diode 262

8.4 Transferred–Electron Devices 267

8.5 Quantum–Effect Devices 271

8.6 Hot–Electron Devices 276

Summary 279

CHAPTER 9 Light Emitting Diodes and Lasers 283

9.1 Radiative Transitions and Optical Absorption 283

9.2 Light–Emitting Diodes 289

9.3 Various Light–Emitting Diodes 294

9.4 Semiconductor Lasers 305

Summary 322

CHAPTER 10 Photodetectors and Solar Cells 326

10.1 Photodetectors 326

10.2 Solar Cells 339

10.3 Silicon and Compound–Semiconductor Solar Cells 346

10.4 Third–Generation Solar Cells 351

10.5 Optical Concentration 355

Summary 355

PART III SEMICONDUCTOR TECHNOLOGY

CHAPTER 11 Crystal Growth and Epitaxy 360

11.1 Silicon Crystal Growth from the Melt 360

11.2 Silicon Float–Zone Proces 366

11.3 GaAs Crystal–Growth Techniques 370

11.4 Material Characterization 373

11.5 Epitaxial–Growth Techniques 380

11.6 Structures and Defects in Epitaxial Layers 387

Summary 391

CHAPTER 12 Film Formation 395

12.1 Thermal Oxidation 395

12.2 Chemical Vapor Deposition of Dielectrics 403

12.3 Chemical Vapor Deposition of Polysilicon 412

12.4 Atom Layer Deposition 415

12.5 Metallization 417

Summary 428

CHAPTER 13 Lithography and Etching 432

13.1 Optical Lithography 432

13.2 Next–Generation Lithographic Methods 445

13.3 Wet Chemical Etching 451

13.4 Dry Etching 454

Summary 466

CHAPTER 14 Impurity Doping 471

14.1 Basic Diffusion Process 472

14.2 Extrinsic Diffusion 481

14.3 Diffusion–Related Processes 485

14.4 Range of Implanted Ions 488

14.5 Implant Damage and Annealing 495

14.6 Implantation–Related Processes 500

Summary 506

CHAPTER 15 Integrated Devices 511

15.1 Passive Components 513

15.2 Bipolar Technology 517

15.3 MOSFET Technology 522

15.4 MESFET Technology 535

15.5 Challenges for Nanoelectronics 538

Summary 543

APPENDIX A List of Symbols 547

APPENDIX B International Systems of Units (SI Units) 549

APPENDIX C Unit Prefixes 550

APPENDIX D Greek Alphabet 551

APPENDIX E Physical Constants 552

APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K 553

APPENDIX G Properties of Si and GaAs at 300 K 554

APPENDIX H Derivation of the Density of States in a Semiconductor 555

APPENDIX I Derivation of Recombination Rate for Indirect Recombination 559

APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant–Tunneling Diode 561

APPENDIX K Basic Kinetic Theory of Gases 563

APPENDIX L Answers to Selected Problems 565

Photo credits 568

Index 569