Semiconductor Nanophotonics, 1st ed. 2020
Materials, Models, and Devices
Springer Series in Solid-State Sciences Series, Vol. 194

This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. 

The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Introduction

(Kneissl)

PART A: Semiconductor Nanostructures

(Hoffmann)

1. Submonolayer Quantum Dots

(Owschimikow, Pohl, Schliwa, Strittmatter, Eisele Dähne, Lehmann, Niermann, Herzog, Lignau)

1. Carrier localization in Submonolayer Quantum Dots

d.      Static and Dynamic Optical and Electronic Properties of SML QDs

e.      Devices based on SML Quantum dots

f.        Conclusion and Perspectives

1. Stressor-Induced Site Control of Quantum Dots for Single-Photon Sources

(Pohl, Schliwa, Strittmatter, Niermann, Lehmann, Kantner, Wünsche Bandelow, Koprucki)

Stressor-Induced Nucleation of Quantum Dots
1. Simulation of Strain in Semiconductors
2. Nucleation Control by a Buried Aperture Stressor
3.  Strain Measurements by means of Electron Holography
4. Single-Photon Source based on Stressor-Induced QD Site Control

f.        Realization of an efficient current Injection into a single site-controlled quantum dot

g.      Conclusion and Perspectives

1. Coherent and incoherent dynamics in quantum dots and nanophotonic devices

(Lüdge, Owschimikow, Lingnau, Kolarczik, Woggon, Vladimirov, Pimenov, Wolfrum, Meinecke)

1. Introduction
2. Ultrafast carrier dynamics in semiconductors with reduced dimensionality: Quantum-dots, submonolayer QDs and crossed excitons
3.  Quantum state tomography and dynamics of Wigner functions
4.  Dynamics and timing jitter in multisection mode-locked laser diodes
5. Conclusion and Outlook

1. Optical and Structural Properties of Nitride based Nanostructures

(Hoffmann, Christen, Wagner, Bertram, Maultzsch, Eisele)

1. Introduction

d.      Optical analysis of low-dimensional nitrides

e.      Conclusion and Perspectives

1. Theory of spectroscopy and light emission of semiconductor nanostructures

1. Introduction
2. State of the art of microscopic description of quantum dots and atomically thin semiconductors
3. Coupled quantum dot-cavity structures
4. Radiative emission of confined many particle configurations
5. Intraband transitions between bound QD states and states of the host medium
6. Two-dimensional spectroscopy in semiconductor nanostructures
Conclusion and Outlook

PART B: Nanophotonics Devices

(Kneissl, Reitzenstein)

1. Multi-Dimensional modelling and simulation of nanophotonic devices

(Bandelow, Koprucki, Burger, Kantner, Wünsche, Mielke, Schmidt, Rotundo, Höhne)

a.      Introduction

b.      Statement of the problem

c.       Multispecies modelling of QD lasers

d.      Quantum-classical hybrid modelling of SPEs and nanolasers with few QDs

f.        Numerical methods for Maxwell equations

g.      Applications

h.      Conclusion and Outlook

1. Deterministic quantum devices for optical quantum communication

(Rodt, Burger, Koprucki, Kantner)

c.       Deterministic fabrication technologies

d.      Quantum light sources based on deterministic quantum dot microlenses

e.      On-chip quantum circuits with deterministically-integrated quantum dots

f.        Conclusion and Outlook

1. Quantum networks based on single photons

(Rödiger, Perlot, Benson, Freund)

a.      Introduction

b.      Single Photon Generation & Manipulation

c.       Frequency Conversion of Quantum Light

d.      Single Photon Storage

e.      Quantum Communication

f.        Free-Space Quantum Link

g.      Conclusion and Outlook

1. Vertical-cavity surface-emitting lasers (VCSELs) for communication, sensing, and integration 

(Lott)

a.      Introduction

b.      State-of-the-art VCSELs

c.       VCSELs for communication

d.      VCSELs for sensing

e.      VCSELs for integration

f.        VCSEL frontiers

g.      Conclusion and Outlook

1. VCSEL-based silicon photonic interconnect technologies

(Seiler, Tillack, Zimmermann)

a.      Introduction

b.      State of the art interconnect technologies and requirements

c.       Long-wavelength VCSELs

d.      Characterization of 1.3µm and 1.55µm InP-VCSELs

1. Nitride microcavities for classical and non-classical light emitters

(Dadgar, Strittmatter, Betram, Schliwa, Hoffmann, Mautzsch, Christen, Wagner)

1. Introduction
Bragg mirrors, GaN quantum dots and microcavities
2. Microstructure and emission properties

d.      Towards devices

e.      Conclusion and Perspectives

1. Group III-nitride-based laser diodes

(Kneissl, Wernicke, Sulmoni, Kuhn, Weyers)

b.      Design of AlGaN-based deep UV laser diodes

c.       Fabrication of AlGaN-based UV laser diodes

d.      Low defect density AlN templates

e.      Growth of AlGaN laser heterostructures

f.        Gain and losses in deep UV AlGaN lasers by optical pumping

h.      Conclusion and Outlook

Michael Kneissl is the Executive Director of the Institute of Solid State Physics and chair of Experimental Nanophysics and Photonics at the Technical University of Berlin (TU Berlin), Germany. He holds a dual appointment at the Ferdinand-Braun-Institute (FBH) in Berlin, where he heads the Joint Lab GaN Optoelectronics and is also spokesperson of the Collaborative Research Center “Semiconductor Nanophotonics” (CRC 787). His interests include group III-nitride semiconductor materials, metal organic vapor phase epitaxy of wide bandgap semiconductors and nanostructures as well as novel optoelectronic devices, including UV LEDs and laser diodes. He has co-authored over 300 publications, five book chapters, and holds more than 60 patents in the area of group II-nitride device technologies. He recently co-edited a book on "III-Nitride Ultraviolet Emitters - Technology & Applications" which was published in 2016 within the Springer Series on Material Science. In 2016 Michael Kneissl was named Fellow of the Institute of Electrical and Electronics Engineers (IEEE) for his contributions to the development of wide bandgap semiconductor laser diodes and ultraviolet LEDs.

Andreas Knorr works in the field of nonlinear optics and quantum electronics of nanostructured solids. His research is focused on the interaction of light and matter, self-consistent solutions of Maxwell- and material equations and many body effects in open quantum systems. Since 2000 Andreas Knorr holds a professorship at the TU Berlin. His scientific career, which started at the Friedrich-Schiller-University Jena led him to the Universities of New Mexico, Arizona (College of Optical Sciences), Marburg, Göttingen, Auckland, Kingston and to Sandia National Labs Albuquerque and NTT Tokio. He was a Divisional Editor of Physical Review Letters from 2013-2018.

Stephan Reitzenstein is Director of the Center of Nanophotonics of the Institute of Solid State Phys

Covers all experimental and theoretical essentials of semiconductor nanostructures and nanophotonic devices

Written and edited by an internationally recognized team of leading experts

Offers a cutting-edge resource for all students and researchers working on semiconductor materials and nano-devices