Description
Nanoelectronic Devices
Authors: Park Byung-Gook, Hwang Sung Woo, Park Young June
Language: English
Subjects for Nanoelectronic Devices:
Keywords
FET Device; Resonant Tunneling Diode; Quantum Mechanics for Nanoelectronic Devices; DNA Layer; Electron Transport and Device Physics; Gate Bias; MOS Structure and CMOS Devices; quasi-Fermi Level; Quantum Dot Devices; Threshold Voltage; MOSFET as the Molecular Sensor; Depletion Region; Equivalent Circuit; Band Diagram; Channel Bias; Dg MOSFET; DNA Charge; Quantum Dot; Inversion Charge; Wave Function; Probe DNA; Gate Bias Voltage; MOS Structure; Strong Inversion; MOS Capacitor; Target DNA; Fermi Level; Carrier Concentration; Oxide Semiconductor Interface; Dψ Dx
88.34 €
In Print (Delivery period: 15 days).
Add to cart
the print on demand of Park Byung-Gook, Hwang Sung Woo, Park Young June
Support: Print on demand
Description
/li>Contents
/li>Biography
/li>
This book provides readers with the knowledge in fundamentals of nanoelectronic devicesThe authors build the principles of nanoelectronic devices based on those of microelectronic devices wherever possible and introduce the inherently nanoelectronic principles gradually. They start a brief review of quantum mechanics and solid-state physics that can form the basis of semiconductor device physics. The book also covers the basics of electron transport and p?n junctions, develops the operations of MOS capacitors and MOSFETs and introduces some basic CMOS circuits. The last chapter is devoted to the nano-biotechnology application of field-effect transistors.
Quantum Mechanics for Nanoelectronic Devices. Electron Transport and Device Physics.
MOS Structure and CMOS Devices. Quantum Well Devices. Quantum Wire Devices. Quantum Dot Devices. MOSFET as the Molecular Sensor.
