Description
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Authors: Hao Yue, Zhang Jin Feng, Zhang Jin Cheng
Language: EnglishSubjects for Nitride Wide Bandgap Semiconductor Material and...:
Keywords
GaN HEMT; GaN Heterostructure; Ill-nitride; AlGaN Barrier Layer; wide band gap; Nucleation Layer; high electron mobility transistors; GaN HEMTs; semiconductor material; 2DEG Density; electronic devices; AlN Interlayer; GaN Film; Sapphire Substrate; AlN Nucleation Layer; GaN Buffer Layer; Vicinal Substrates; Alloy Disorder Scattering; HEMT; GaN Channel; Breakdown Voltage; GaN Template; Dislocation Density; Reciprocal Space Mapping; AlGaN Barrier; Room Temperature Band Gap; GaN Epilayer; GaN Cap Layer; Fluorine Plasma; IFR Scattering
56.31 €
In Print (Delivery period: 14 days).
Add to cart the book of Hao Yue, Zhang Jin Feng, Zhang Jin ChengPublication date: 06-2020
· 17.8x25.4 cm · Paperback
Approximative price 220.72 €
In Print (Delivery period: 15 days).
Add to cart the book of Hao Yue, Zhang Jin Feng, Zhang Jin ChengPublication date: 11-2016
· 17.8x25.4 cm · Hardback
Description
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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
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